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2015•Journal of Computational ElectronicsRequires access

A novel symmetrical 4H–SiC MESFET: an effective way to improve the breakdown voltage

Zeinab Ramezani, Ali A. Orouji, Hassan Agharezaei

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Key concepts: MESFET, Breakdown voltage, Materials science, Voltage, Field-effect transistor, Optoelectronics, Transistor, Microwave

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