2012•Unpublished venueRequires access

The impact of melting during reset operation on the reliability of phase change memory

Pei-Ying Penny Du, Jau-Yi Wu, Tzu‐Hsuan Hsu, Ming-Hsiu Lee, Tien-Yen Wang, Huai‐Yu Cheng, Erh-Kun Lai, Sheng-Chih Lai, Hsiang-Lan Lung, Sang‐Bum Kim, Matthew J. BrightSky, Yu Zhu, Surbhi Mittal, Roger W. Cheek, Simone Raoux, Eric A. Joseph, Alejandro G. Schrott, Jing Li, Chung H. Lam

Open publisher page 8 citations

Abstract

Operation impact on endurance performance in GST-based phase change memory is investigated from small arrays to large test chips. SET operation induced electromigration and phase segregation are observed. For the first time, the RESET melting healing effect is proposed to partially repair the SET induced damage and further extend the endurance. This concept can be easily implemented by accordingly designing the control circuits.

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Available abstract

Key concepts: Reset (finance), Phase-change memory, Electromigration, Reliability (semiconductor), Phase change, Set (abstract data type), Computer science, Phase (matter)