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1998•Electronics LettersRequires access

Suppressed threshold voltage roll-off characteristicof 40 nmgate length ultrathin SOI MOSFET

K. Ishii, E. Suzuki, S. Kanemaru, Tatsuro Maeda, Kotobu Nagai, T. Sekigawa

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Abstract

The authors have experimentally demonstrated a highly suppressed threshold voltage roll-off characteristic of a 40 nm gate length ultrathin (11 nm) silicon-on-insulator (SOI) n-MOSFET. It is observed that ΔVth is only 0.2 V when compared with a long gate length (150 nm) device. The marked effectiveness of an ultrathin SOI channel is experimentally confirmed to suppress the short-channel effect.

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What this paper is about

The authors have experimentally demonstrated a highly suppressed threshold voltage roll-off characteristic of a 40 nm gate length ultrathin (11 nm) silicon-on-insulator (SOI) n-MOSFET. It is observed that ΔVth is only 0.2 V when compared with a long gate length (150 nm) device. The marked effectiveness of an ultrathin SOI channel is experimentally confirmed to suppress the short-channel effect.

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OpenAlex reports 13 citations for this work. Citation counts describe recorded attention and do not establish research quality.

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Available abstract

The authors have experimentally demonstrated a highly suppressed threshold voltage roll-off characteristic of a 40 nm gate length ultrathin (11 nm) silicon-on-insulator (SOI) n-MOSFET. It is observed that ΔVth is only 0.2 V when compared with a long gate length (150 nm) device. The marked effectiveness of an ultrathin SOI channel is experimentally confirmed to suppress the short-channel effect.

Key concepts: Silicon on insulator, Threshold voltage, Materials science, MOSFET, Optoelectronics, Short-channel effect, Reverse short-channel effect, Silicon

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