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2014•Journal of Applied PhysicsRequires access

Investigation of Al-Sb-Se alloy for long data retention and low power consumption phase change memory application

Zhonghua Zhang, Yifeng Gu, Sannian Song, Zhitang Song, Yan Cheng, Bo Liu, Yueqin Zhu, Dong Zhou, Songlin Feng

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Abstract

Te-free phase-change material Al-Sb-Se is investigated and considered to be a promising candidate of storage medium for phase change memory (PCM) application. Al0.49Sb2.19Se exhibits a higher crystallization temperature (∼222.7 °C), a larger crystallization activation energy (∼4.17 eV), and a better data retention (∼146.5 °C for 10 yr) in comparison with those of Ge2Sb2Te5. The uniformity of material distribution for crystalline film improves the reliability of phase change memory. Al0.49Sb2.19Se-based memory cell significantly shows lower power consumption for SET/RESET reversible switching than that of Ge2Sb2Te5-based one. Furthermore, PCM based on Al0.49Sb2.19Se shows endurance up to 3.5 × 103 cycles with stability resistance of about two orders of magnitude on/off ratio.

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What this paper is about

Te-free phase-change material Al-Sb-Se is investigated and considered to be a promising candidate of storage medium for phase change memory (PCM) application. Al0.49Sb2.19Se exhibits a higher crystallization temperature (∼222.7 °C), a larger crystallization activation energy (∼4.17 eV), and a better data retention (∼146.5 °C for 10 yr) in comparison with those of Ge2Sb2Te5. The uniformity of material distribution for crystalline film improves the reliability of phase change memory. Al0.49Sb2.19Se-based memory cell significantly shows lower power consumption for SET/RESET reversible switching than that of Ge2Sb2Te5-based one. Furthermore, PCM based on Al0.49Sb2.19Se shows endurance up to 3.5 × 103 cycles with stability resistance of about two orders of magnitude on/off ratio.

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Available abstract

Te-free phase-change material Al-Sb-Se is investigated and considered to be a promising candidate of storage medium for phase change memory (PCM) application. Al0.49Sb2.19Se exhibits a higher crystallization temperature (∼222.7 °C), a larger crystallization activation energy (∼4.17 eV), and a better data retention (∼146.5 °C for 10 yr) in comparison with those of Ge2Sb2Te5. The uniformity of material distribution for crystalline film improves the reliability of phase change memory. Al0.49Sb2.19Se-based memory cell significantly shows lower power consumption for SET/RESET reversible switching than that of Ge2Sb2Te5-based one. Furthermore, PCM based on Al0.49Sb2.19Se shows endurance up to 3.5 × 103 cycles with stability resistance of about two orders of magnitude on/off ratio.

Key concepts: Phase-change memory, Data retention, Materials science, Crystallization, Reset (finance), Reliability (semiconductor), Power consumption, Alloy

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