Size Fluctuation of 50 nm Periodic GaInAsP/InP Wire Structure by Electron Beam Lithography and Wet Chemical Etching

We investigated a size fluctuation of 50 nm periodic wire pattern of GaInAsP/InP structure with a typical wire width of around 30 nm, which was fabricated by an electron beam lithography followed by wet chemical etching. The size fluctuation of the ZEP-520 positive resist pattern was reduced from 2.7 nm to 1.4 nm by using a corrected dose profile taking the proximity effect into account, and that of the quantum-wire structure after wet etching was reduced from 3.8 nm to 2.9 nm.