ScholarLens Back to search
1992•Journal of Crystal GrowthRequires access

Selective epitaxial growth of Si1−xGex by cold-wall ultrahigh vacuum chemical vapor deposition using disilane and germane

Masayuki Hiroi, Toru Tatsumi

Open publisher page 9 citations

Abstract

This record does not include an abstract. Use the full-text link above if available.

About this research paper

What this paper is about

An abstract is not available in the OpenAlex record for this paper.

Why it matters

OpenAlex reports 9 citations for this work. Citation counts describe recorded attention and do not establish research quality.

Key contribution

A contribution statement is not available in the OpenAlex record.

Method / approach

Method details are not available in the OpenAlex metadata.

Main findings

Findings are not separately available in the OpenAlex metadata.

Limitations

Limitations are not available in the OpenAlex metadata.

Applications

Application details are not available in the OpenAlex metadata.

Key concepts: Germane, Disilane, Germanium, Chemistry, Epitaxy, Growth rate, Chemical vapor deposition, Volumetric flow rate

Related papers

Related paper 1Related paper 2
Back to paper searchBrowse research topicsOriginal source
Selective epitaxial growth of Si1−xGex by cold-wall ultrahigh vacuum chemical vapor deposition using disilane and germane — Research Paper | ScholarLens