2011Applied Physics LettersRequires access

Investigation of fast and slow decays in InGaN/GaN quantum wells

Guan Sun, Guibao Xu, Yu‐Jie Ding, Hongping Zhao, Guangyu Liu, Jing Zhang, Nelson Tansu

Open publisher page 53 citations

Abstract

We have measured and analyzed the photoluminescence spectra from InGaN/GaN multiple quantum wells. Emission peaks due to recombination of the photogenerated carriers occupying localized states and extended states within quantum wells have been identified through temperature-dependent photoluminescence. Fast and slow decays have been attributed to recombination of carriers in extended states and localized states, respectively, based on time-resolved pump-probe differential photoluminescence.

About this research paper

What this paper is about

We have measured and analyzed the photoluminescence spectra from InGaN/GaN multiple quantum wells. Emission peaks due to recombination of the photogenerated carriers occupying localized states and extended states within quantum wells have been identified through temperature-dependent photoluminescence. Fast and slow decays have been attributed to recombination of carriers in extended states and localized states, respectively, based on time-resolved pump-probe differential photoluminescence.

Why it matters

OpenAlex reports 53 citations for this work. Citation counts describe recorded attention and do not establish research quality.

Key contribution

A contribution statement is not available in the OpenAlex record.

Method / approach

Method details are not available in the OpenAlex metadata.

Main findings

Findings are not separately available in the OpenAlex metadata.

Limitations

Limitations are not available in the OpenAlex metadata.

Applications

Application details are not available in the OpenAlex metadata.

Available abstract

We have measured and analyzed the photoluminescence spectra from InGaN/GaN multiple quantum wells. Emission peaks due to recombination of the photogenerated carriers occupying localized states and extended states within quantum wells have been identified through temperature-dependent photoluminescence. Fast and slow decays have been attributed to recombination of carriers in extended states and localized states, respectively, based on time-resolved pump-probe differential photoluminescence.

Key concepts: Photoluminescence, Quantum well, Recombination, Wide-bandgap semiconductor, Spectral line, Optoelectronics, Materials science, Spontaneous emission

Related papers

Back to paper searchBrowse research topicsOriginal source
Investigation of fast and slow decays in InGaN/GaN quantum wells — Research Paper | ScholarLens