Investigation of fast and slow decays in InGaN/GaN quantum wells
Guan Sun, Guibao Xu, Yu‐Jie Ding, Hongping Zhao, Guangyu Liu, Jing Zhang, Nelson Tansu
Abstract
Guan Sun, Guibao Xu, Yu‐Jie Ding, Hongping Zhao, Guangyu Liu, Jing Zhang, Nelson Tansu
Abstract
We have measured and analyzed the photoluminescence spectra from InGaN/GaN multiple quantum wells. Emission peaks due to recombination of the photogenerated carriers occupying localized states and extended states within quantum wells have been identified through temperature-dependent photoluminescence. Fast and slow decays have been attributed to recombination of carriers in extended states and localized states, respectively, based on time-resolved pump-probe differential photoluminescence.
OpenAlex reports 53 citations for this work. Citation counts describe recorded attention and do not establish research quality.
A contribution statement is not available in the OpenAlex record.
Method details are not available in the OpenAlex metadata.
Findings are not separately available in the OpenAlex metadata.
Limitations are not available in the OpenAlex metadata.
Application details are not available in the OpenAlex metadata.
We have measured and analyzed the photoluminescence spectra from InGaN/GaN multiple quantum wells. Emission peaks due to recombination of the photogenerated carriers occupying localized states and extended states within quantum wells have been identified through temperature-dependent photoluminescence. Fast and slow decays have been attributed to recombination of carriers in extended states and localized states, respectively, based on time-resolved pump-probe differential photoluminescence.
Key concepts: Photoluminescence, Quantum well, Recombination, Wide-bandgap semiconductor, Spectral line, Optoelectronics, Materials science, Spontaneous emission