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1984•IEEE Electron Device LettersRequires access

GaAs MESFET's fabricated on monolithic GaAs/Si substrates

H. K. Choi, B-Y. Tsaur, G. Metze, G. W. Turner, J. C. C. Fan

Open publisher page 57 citations

Abstract

GaAs MESFET's have been fabricated for the first time on monolithic GaAs/Si substrates. The substrates were prepared by growing single-crystal GaAs layers on Si wafers that had been coated with a Ge layer deposited by e-beam evaporation. The MESFET's exhibit good transistor characteristics, with maximum transconductance of 105 mS/mm for a gate length of 2.1 µm.

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What this paper is about

GaAs MESFET's have been fabricated for the first time on monolithic GaAs/Si substrates. The substrates were prepared by growing single-crystal GaAs layers on Si wafers that had been coated with a Ge layer deposited by e-beam evaporation. The MESFET's exhibit good transistor characteristics, with maximum transconductance of 105 mS/mm for a gate length of 2.1 µm.

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Available abstract

GaAs MESFET's have been fabricated for the first time on monolithic GaAs/Si substrates. The substrates were prepared by growing single-crystal GaAs layers on Si wafers that had been coated with a Ge layer deposited by e-beam evaporation. The MESFET's exhibit good transistor characteristics, with maximum transconductance of 105 mS/mm for a gate length of 2.1 µm.

Key concepts: MESFET, Transconductance, Materials science, Optoelectronics, Gallium arsenide, Wafer, Silicon, Layer (electronics)

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