1984•Applied Physics LettersRequires access
AlGaAs double-heterostructure diode lasers fabricated on a monolithic GaAs/Si substrate
T. H. Windhorn, G. Metze, B-Y. Tsaur, John C. C. Fan
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Abstract
AlGaAs double-heterostructure diode lasers have been fabricated for the first time on a monolithic GaAs/Si substrate. The heterostructure was prepared by growth of a series of GaAs and AlGaAs layers on a Ge-coated Si wafer. For pulsed operation at 77 K the lowest threshold current was 260 mA, the highest power output was 1.8 mW per facet, and the highest differential quantum efficiency was 1.2%.