2002•Microelectronics ReliabilityRequires access

The abnormality in gate oxide failure induced by stress-enhanced diffusion of polycrystalline silicon

Yongseok Ahn, Sanghyun Lee, G.H. Koh, Taeyoung Chung, Kinam Kim

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Key concepts: Polycrystalline silicon, Gate oxide, Materials science, Oxide, Crystallite, Silicon, Time-dependent gate oxide breakdown, Gate dielectric

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