John S. Suehle
Abstract
Abstract This article examines the phenomenon of time-dependent dielectric breakdown (TDDB) in ultrathin gate oxide films and explains why it is no longer considered a catastrophic failure in MOSFET-containing ICs.
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Abstract This article examines the phenomenon of time-dependent dielectric breakdown (TDDB) in ultrathin gate oxide films and explains why it is no longer considered a catastrophic failure in MOSFET-containing ICs.
Key concepts: Time-dependent gate oxide breakdown, Gate oxide, Dielectric strength, Materials science, Oxide, MOSFET, Dielectric, Gate dielectric