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1982•Journal of The Electrochemical SocietyRequires access

Improved Dry Etching Resistance of Electron‐Beam Resist by Ion Exposure Process

Kōzō Mochiji, Yasuo Wada, Hidehito Obayashi

Open publisher page 11 citations

Abstract

The dry etching resistance of an electron‐beam resist (PMMA) is successfully improved by P + ion exposure prior to dry etching. The ion exposure increases resist stability by inhibiting pattern deformation and reducing resist thickness loss during dry etching. It changes the chemical structure of the resist polymer into another material which is stable to dry etching. This technique is utilized for successful dry etching of 1 μm hole patterns in MOS LSI manufacturing.

About this research paper

What this paper is about

The dry etching resistance of an electron‐beam resist (PMMA) is successfully improved by P + ion exposure prior to dry etching. The ion exposure increases resist stability by inhibiting pattern deformation and reducing resist thickness loss during dry etching. It changes the chemical structure of the resist polymer into another material which is stable to dry etching. This technique is utilized for successful dry etching of 1 μm hole patterns in MOS LSI manufacturing.

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OpenAlex reports 11 citations for this work. Citation counts describe recorded attention and do not establish research quality.

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Available abstract

The dry etching resistance of an electron‐beam resist (PMMA) is successfully improved by P + ion exposure prior to dry etching. The ion exposure increases resist stability by inhibiting pattern deformation and reducing resist thickness loss during dry etching. It changes the chemical structure of the resist polymer into another material which is stable to dry etching. This technique is utilized for successful dry etching of 1 μm hole patterns in MOS LSI manufacturing.

Key concepts: Resist, Dry etching, Etching (microfabrication), Reactive-ion etching, Materials science, Isotropic etching, Cathode ray, Electron-beam lithography

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