2001SID Symposium Digest of Technical PapersRequires access

P‐43: A Simple Structure and Fabrication of Carbon‐Nanotube Field Emission Display

Yongsun Choi, J. H. Kang, H. Y. Kim, Y. J. Lee, J. W. Kim, Jinyong Jung, J. M. Kim, Y. W. Jin, N. S. Lee, Sung Ho Jo, Kwangyeul Choi, C. G. Lee, J.H. You

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Abstract

Abstract A triode structure of field emission displays based upon carbon nanotube emitters is presented. In this structure, gate electrodes are located underneath cathode electrodes with an in‐between insulating layer, so called an under‐gate type triode structure. The modulation of electron emission by changing gate voltages is confirmed. The advantage of simple structure and fabrication processes may lead the under‐gate triode type structure to the practical applications.

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Abstract A triode structure of field emission displays based upon carbon nanotube emitters is presented. In this structure, gate electrodes are located underneath cathode electrodes with an in‐between insulating layer, so called an under‐gate type triode structure. The modulation of electron emission by changing gate voltages is confirmed. The advantage of simple structure and fabrication processes may lead the under‐gate triode type structure to the practical applications.

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Available abstract

Abstract A triode structure of field emission displays based upon carbon nanotube emitters is presented. In this structure, gate electrodes are located underneath cathode electrodes with an in‐between insulating layer, so called an under‐gate type triode structure. The modulation of electron emission by changing gate voltages is confirmed. The advantage of simple structure and fabrication processes may lead the under‐gate triode type structure to the practical applications.

Key concepts: Triode, Fabrication, Materials science, Field electron emission, Field emission display, Carbon nanotube, Optoelectronics, Cathode

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