1987•Applied Physics LettersRequires access
Tunneling transfer field-effect transistor: A negative transconductance device
B. Vinter, Armand Tardella
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Abstract
A double channel field-effect structure is proposed in which the resonant tunneling between states in either part of the channel is employed to control the parallel transport in the channel. Realistic calculations of the conductance in this structure show that one can use it to design a negative transconductance device or as a velocity field transistor with much improved mobility modulation.