Quantum distributed model of the resonant tunneling transistor

Two-dimensional simulation is crucial in the analysis of the transport characteristics of a resonant tunneling transistor that has a base electrode attached to the well region of a double barrier structure because of the transistor's two-dimensional heterogeneousness. We propose a novel numerical model of the resonant tunneling transistor that includes two-dimensional potential distribution and two-dimensional spatial current distribution. By using this mode in the present model, it is found that the transistor's I-V characteristics are strongly dependent on its internal well resistance.>