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Fine line lithography systems for VLSI

A. N. Broers

Open publisher page 5 citations

Abstract

This paper discusses advantages and disadvantages of advanced lithography techniques under investigation for the fabrication of semiconductor integrated circuits. These techniques are replacing conventional ultra-violet (UV) contact/proximity printing. They employ standard UV radiation (λ = 3500Å-4000ÅA), deep UV radiation (λ = 2000Å-2600Å), soft x-rays (λ = 4Å-40Å), and electrons. It is assumed that the reader is familiar with the basic principles of the new methods.

About this research paper

What this paper is about

This paper discusses advantages and disadvantages of advanced lithography techniques under investigation for the fabrication of semiconductor integrated circuits. These techniques are replacing conventional ultra-violet (UV) contact/proximity printing. They employ standard UV radiation (λ = 3500Å-4000ÅA), deep UV radiation (λ = 2000Å-2600Å), soft x-rays (λ = 4Å-40Å), and electrons. It is assumed that the reader is familiar with the basic principles of the new methods.

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OpenAlex reports 5 citations for this work. Citation counts describe recorded attention and do not establish research quality.

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Available abstract

This paper discusses advantages and disadvantages of advanced lithography techniques under investigation for the fabrication of semiconductor integrated circuits. These techniques are replacing conventional ultra-violet (UV) contact/proximity printing. They employ standard UV radiation (λ = 3500Å-4000ÅA), deep UV radiation (λ = 2000Å-2600Å), soft x-rays (λ = 4Å-40Å), and electrons. It is assumed that the reader is familiar with the basic principles of the new methods.

Key concepts: Lithography, Very-large-scale integration, Fabrication, Photolithography, Computer science, Extreme ultraviolet lithography, Integrated circuit, Next-generation lithography

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