2002Unpublished venueRequires access

Sub-50-nm patterning in EUV lithography

Hiroaki Oizumi, Iwao Nishiyama, Hiromasa Yamanashi, Ei Yano, Shinji Okazaki

Open publisher page 2 citations

Abstract

In this work, we have introduced and investigated a micro-field exposure system for EUV lithography (EUVL) at an exposure wavelength of 13.5 nm using 20:1 Schwarzschild optics. The resolution limit of this exposure system was evaluated by experimental pattern replications.

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What this paper is about

In this work, we have introduced and investigated a micro-field exposure system for EUV lithography (EUVL) at an exposure wavelength of 13.5 nm using 20:1 Schwarzschild optics. The resolution limit of this exposure system was evaluated by experimental pattern replications.

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OpenAlex reports 2 citations for this work. Citation counts describe recorded attention and do not establish research quality.

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Available abstract

In this work, we have introduced and investigated a micro-field exposure system for EUV lithography (EUVL) at an exposure wavelength of 13.5 nm using 20:1 Schwarzschild optics. The resolution limit of this exposure system was evaluated by experimental pattern replications.

Key concepts: Extreme ultraviolet lithography, Lithography, Next-generation lithography, Wavelength, Optics, Photolithography, Materials science, Optoelectronics

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