Sub-50-nm patterning in EUV lithography
Hiroaki Oizumi, Iwao Nishiyama, Hiromasa Yamanashi, Ei Yano, Shinji Okazaki
Abstract
Hiroaki Oizumi, Iwao Nishiyama, Hiromasa Yamanashi, Ei Yano, Shinji Okazaki
Abstract
In this work, we have introduced and investigated a micro-field exposure system for EUV lithography (EUVL) at an exposure wavelength of 13.5 nm using 20:1 Schwarzschild optics. The resolution limit of this exposure system was evaluated by experimental pattern replications.
OpenAlex reports 2 citations for this work. Citation counts describe recorded attention and do not establish research quality.
A contribution statement is not available in the OpenAlex record.
Method details are not available in the OpenAlex metadata.
Findings are not separately available in the OpenAlex metadata.
Limitations are not available in the OpenAlex metadata.
Application details are not available in the OpenAlex metadata.
In this work, we have introduced and investigated a micro-field exposure system for EUV lithography (EUVL) at an exposure wavelength of 13.5 nm using 20:1 Schwarzschild optics. The resolution limit of this exposure system was evaluated by experimental pattern replications.
Key concepts: Extreme ultraviolet lithography, Lithography, Next-generation lithography, Wavelength, Optics, Photolithography, Materials science, Optoelectronics