An increase of the electromigration reliability of ohmic contacts by enhancing backflow effect

A novel multi-layered contact metallization structure is proposed, in which the backflow effect is intentionally enhanced to restrain electromigration in contact metallization. Under accelerated conditions of constant and pulsed DC, including current, frequency and temperature ramps, the experiments indicate an evident improvement for the novel backflow-hardened contacts over the traditional structures in the dependence of electromigration on current density, frequency, duty factor and temperature.