1992•Unpublished venueRequires access

Increase in electromigration resistance by enhancing backflow effect

X.X. Li, W. Zhang, Yafeng Ji, Z. Wang, Yi-Lung Cheng, Guohua Gao

Abstract

The backflow effect on electromigration has been studied in terms of experiment and theory. The difference of electromigration resistance between the two materials Al-2%Cu/Ti and the stress gradient caused by a discontinuous SiO/sub 2/ overcoating layer were used to enhance the backflow intentionally to restrain the electromigration and improve the lifetime of metallization. A theoretical model is proposed to explain the formation of backflow.>

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Key concepts: Electromigration, Backflow, Materials science, Layer (electronics), Stress (linguistics), Electronic engineering, Composite material, Engineering