2012•Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIERequires access

Impact of indium surface segregation on optical properties of ultrathin InGaN/GaN quantum wells

Mykhailo V. Klymenko, Igor A. Sukhoivanov, Oleksiy V. Shulika

Abstract

We investigate theoretically the influence of indium surface segregation in InGaN/GaN single quantum wells on its optical properties. Obtained results show that the influence of the surface segregation on the dipole matrix element is not equal for all optical transition. This effect results from the joint action of the piezoelectric polarization and indium surface segregation which change selection rules. Quantum well structures having different indium amount are analyzed and found that the influence of the indium surface segregation on absorption spectra is more pronounced in quantum well structures with high indium amount.

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Key concepts: Indium, Indium gallium nitride, Materials science, Quantum well, Optoelectronics, Polarization (electrochemistry), Piezoelectricity, Dipole