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Optically activated GaAs MMIC switch for microwave and millimeter wave applications

A. Paolella, A. Madjar, P.R. Herczfeld, D. Sturzebecher

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Abstract

Optical control of microwave devices particularly MMIC is a rapidly growing research area. The GaAs MESFET is the prime candidate as the optical detector for MMIC applications. In this paper a theoretical analysis is presented which predicts the photoresponse in the MESFET. The analysis includes both internal and external photovoltaic and photoconductive effects. The paper also describes the operation of an optically activated GaAs MMIC switch using GaAs MESFET as the optical detector.

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What this paper is about

Optical control of microwave devices particularly MMIC is a rapidly growing research area. The GaAs MESFET is the prime candidate as the optical detector for MMIC applications. In this paper a theoretical analysis is presented which predicts the photoresponse in the MESFET. The analysis includes both internal and external photovoltaic and photoconductive effects. The paper also describes the operation of an optically activated GaAs MMIC switch using GaAs MESFET as the optical detector.

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Available abstract

Optical control of microwave devices particularly MMIC is a rapidly growing research area. The GaAs MESFET is the prime candidate as the optical detector for MMIC applications. In this paper a theoretical analysis is presented which predicts the photoresponse in the MESFET. The analysis includes both internal and external photovoltaic and photoconductive effects. The paper also describes the operation of an optically activated GaAs MMIC switch using GaAs MESFET as the optical detector.

Key concepts: MESFET, Monolithic microwave integrated circuit, Optoelectronics, Microwave, Gallium arsenide, Extremely high frequency, Detector, Materials science

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