On the suitability of Gallium-Nitride (GaN) based automotive power electronics

This paper aims at discussing the possibility of using GaN power devices in automotive power electronics applications. The major issues with current silicon-based devices are highlighted in this paper. Furthermore, the paper also discusses the possible solutions offered by wide-band gap semiconductors, specifically Gallium-Nitride (GaN). The fundamental steps in designing GaN devices includes choosing the substrate, the dimensions of each layer, the length of gate, drain, source, and the distance between them, selecting materials for contacts, and finally, optimizing passivation layer. Moreover, to achieve higher breakdown voltages, field plate technology has to be executed. High voltage, high current, and high temperature operation of previously fabricated GaN devices are studied and summarized. It can be concluded that GaN definitely has the potential to dominate the next generation of automotive power electronic systems. However, certain issues, such as normally-off and vertical operation have to be thoroughly elucidated.