Exciton Oscillator Strength in GaN/AlGaN Quantum Wells
Marian Zamfirescu, Bernard Gil, N. Grandjean, Guillaume Malpuech, A. V. Kavokin, P. Bigenwald, J. Massies
Abstract
Marian Zamfirescu, Bernard Gil, N. Grandjean, Guillaume Malpuech, A. V. Kavokin, P. Bigenwald, J. Massies
Abstract
We have found experimentally that the exciton oscillator strength decreases dramatically with increase of the QW width in a GaN/Al0.07Ga0.93N system. The collapse of the oscillator strength is a manifestation of the polarisation field effect, as confirmed by our variational calculation. We find that only excitons in very thin quantum wells have an oscillator strength exceeding that of the exciton in bulk GaN.
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We have found experimentally that the exciton oscillator strength decreases dramatically with increase of the QW width in a GaN/Al0.07Ga0.93N system. The collapse of the oscillator strength is a manifestation of the polarisation field effect, as confirmed by our variational calculation. We find that only excitons in very thin quantum wells have an oscillator strength exceeding that of the exciton in bulk GaN.
Key concepts: Oscillator strength, Exciton, Quantum well, Condensed matter physics, Field (mathematics), Field strength, Materials science, Physics