Exciton Binding Energy and Exciton Oscillator Strength of GaN-based Quantum-well Structure

The fundamental physics determining such excitonic properties in GaN-based quantum-well structure, as exciton binding energy and exciton oscillator strength is investigated. With the decrease of well width, the exciton binding energy increases and the maximum value is obtained at the critical well width. The band offset also affects the exciton binding energy, higher exciton binding energy correspoding to higher band offset. Quantum confinement increases the spatial overlap between an electron and a hole as a result of potential well confinement, and it also enhances the oscillator strength.