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1996•Applied Physics LettersRequires access

Trimethylarsenic as an alternative to arsine in the metalorganic vapor phase epitaxy of device quality In0.53Ga0.47As/InP

Christophe Pautet, P. Abraham, J. Dazord, R. Favre, François Cauwet, Y. Monteil, J. Bouix, A. Ougazzaden, E. V. K. Rao, A. Mircéa

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Abstract

We have investigated the use of trimethylarsenic (TMAs) as an alternative to arsine in the metalorganic vapor phase epitaxy (MOVPE) of device quality InGaAs lattice matched to InP. Films were deposited with arsine or trimethylarsenic over a wide range of growth conditions in a horizontal low pressure (LP)-MOVPE reactor. In order to minimize carbon incorporation, triethylgallium has been chosen instead of trimethylgallium as the gallium precursor. A minimal growth pressure of 250 mbar and a minimal growth temperature of 550 °C are found to be necessary to ensure specular morphology with TMAs. Electrical and optical properties of InGaAs layers grown using TMAs in the temperature range 600 to 650 °C are comparable to those of layers grown using AsH3.

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What this paper is about

We have investigated the use of trimethylarsenic (TMAs) as an alternative to arsine in the metalorganic vapor phase epitaxy (MOVPE) of device quality InGaAs lattice matched to InP. Films were deposited with arsine or trimethylarsenic over a wide range of growth conditions in a horizontal low pressure (LP)-MOVPE reactor. In order to minimize carbon incorporation, triethylgallium has been chosen instead of trimethylgallium as the gallium precursor. A minimal growth pressure of 250 mbar and a minimal growth temperature of 550 °C are found to be necessary to ensure specular morphology with TMAs. Electrical and optical properties of InGaAs layers grown using TMAs in the temperature range 600 to 650 °C are comparable to those of layers grown using AsH3.

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Available abstract

We have investigated the use of trimethylarsenic (TMAs) as an alternative to arsine in the metalorganic vapor phase epitaxy (MOVPE) of device quality InGaAs lattice matched to InP. Films were deposited with arsine or trimethylarsenic over a wide range of growth conditions in a horizontal low pressure (LP)-MOVPE reactor. In order to minimize carbon incorporation, triethylgallium has been chosen instead of trimethylgallium as the gallium precursor. A minimal growth pressure of 250 mbar and a minimal growth temperature of 550 °C are found to be necessary to ensure specular morphology with TMAs. Electrical and optical properties of InGaAs layers grown using TMAs in the temperature range 600 to 650 °C are comparable to those of layers grown using AsH3.

Key concepts: Trimethylgallium, Arsine, Triethylgallium, Metalorganic vapour phase epitaxy, Epitaxy, Materials science, Gallium, Optoelectronics

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Trimethylarsenic as an alternative to arsine in the metalorganic vapor phase epitaxy of device quality In0.53Ga0.47As/InP — Research Paper | ScholarLens