1994•Journal of Crystal GrowthRequires access

Low carbon incorporation in GaAs grown by chemical beam epitaxy using unprecracked arsine, trimethylgallium and triethylgallium

Seong-Ju Park, Jeong-Rae Ro, Jae-Ki Sim, El-hang Lee

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Key concepts: Triethylgallium, Trimethylgallium, Arsine, Chemical beam epitaxy, Epitaxy, Chemistry, Carbon fibers, Molecular beam epitaxy

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Low carbon incorporation in GaAs grown by chemical beam epitaxy using unprecracked arsine, trimethylgallium and triethylgallium — Research Paper | ScholarLens