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2008•2008 Second International Conference on Integration and Commercialization of Micro and NanosystemsRequires access

Study of Low-Temperature Wafer Bonding With Au-Au Bonding Technique

H. Kurotaki, H. Shinohara, Hiroshi Kobayashi, J. Mizuno, S. Shoji

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Abstract

In general, metal diffusion bonding is carried out at a temperature in the range of 300 ∼ 400 °C and is well documented [1]. However, the knowledge of metal bonding at low temperatures below 300 °C is inadequate yet. On the other hand, low temperature metal bonding is of importance in realizing advanced integrated devices such as MEMS-Semiconductors and high-brightness LED. This paper reports the results of a feasibility study of low-temperature metal bonding with the use of Au-Au diffusion bonding technique.

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What this paper is about

In general, metal diffusion bonding is carried out at a temperature in the range of 300 ∼ 400 °C and is well documented [1]. However, the knowledge of metal bonding at low temperatures below 300 °C is inadequate yet. On the other hand, low temperature metal bonding is of importance in realizing advanced integrated devices such as MEMS-Semiconductors and high-brightness LED. This paper reports the results of a feasibility study of low-temperature metal bonding with the use of Au-Au diffusion bonding technique.

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Available abstract

In general, metal diffusion bonding is carried out at a temperature in the range of 300 ∼ 400 °C and is well documented [1]. However, the knowledge of metal bonding at low temperatures below 300 °C is inadequate yet. On the other hand, low temperature metal bonding is of importance in realizing advanced integrated devices such as MEMS-Semiconductors and high-brightness LED. This paper reports the results of a feasibility study of low-temperature metal bonding with the use of Au-Au diffusion bonding technique.

Key concepts: Diffusion bonding, Wafer bonding, Thermocompression bonding, Materials science, Anodic bonding, Atmospheric temperature range, Wafer, Metallic bonding

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