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Gallium Imide, {Ga(NH) 3/2 } n , a New Polymeric Precursor for Gallium Nitride Powders

Jerzy F. Janik, Richard L. Wells

Open publisher page 112 citations

Abstract

The efficient preparation of the new polymeric gallium imide {Ga(NH)3/2}n from the reaction between [Ga(NMe2)3]2 and NH3 at ambient temperatures is described. The gallium imide precursor is shown by TEM and XRD studies to yield upon pyrolysis a rare cubic/hexagonal variety of gallium nitride, GaN. Some control over the average particle size of GaN in the nanosized region is achieved by application of various pyrolysis schemes.

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The efficient preparation of the new polymeric gallium imide {Ga(NH)3/2}n from the reaction between [Ga(NMe2)3]2 and NH3 at ambient temperatures is described. The gallium imide precursor is shown by TEM and XRD studies to yield upon pyrolysis a rare cubic/hexagonal variety of gallium nitride, GaN. Some control over the average particle size of GaN in the nanosized region is achieved by application of various pyrolysis schemes.

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Available abstract

The efficient preparation of the new polymeric gallium imide {Ga(NH)3/2}n from the reaction between [Ga(NMe2)3]2 and NH3 at ambient temperatures is described. The gallium imide precursor is shown by TEM and XRD studies to yield upon pyrolysis a rare cubic/hexagonal variety of gallium nitride, GaN. Some control over the average particle size of GaN in the nanosized region is achieved by application of various pyrolysis schemes.

Key concepts: Gallium, Imide, Gallium nitride, Pyrolysis, Materials science, Yield (engineering), Nitride, Inorganic chemistry

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