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1989•IEEE Journal of Solid-State CircuitsRequires access

Cell and circuit design for single-poly EPROM

David H. K. Hoe, K.J. Schultz, C.A.T. Salama, R.A. Hadaway, Patrick Kempf

Open publisher page 5 citations

Abstract

The design and characterization of single-poly erasable programmable read-only memory (EPROM) cells in a standard CMOS p-well technology are discussed. Process-compatible high-voltage drivers for programming the cells are presented. A memory array is implemented to illustrate the integration of the cells with standard logic circuitry.>

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What this paper is about

The design and characterization of single-poly erasable programmable read-only memory (EPROM) cells in a standard CMOS p-well technology are discussed. Process-compatible high-voltage drivers for programming the cells are presented. A memory array is implemented to illustrate the integration of the cells with standard logic circuitry.>

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OpenAlex reports 5 citations for this work. Citation counts describe recorded attention and do not establish research quality.

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Available abstract

The design and characterization of single-poly erasable programmable read-only memory (EPROM) cells in a standard CMOS p-well technology are discussed. Process-compatible high-voltage drivers for programming the cells are presented. A memory array is implemented to illustrate the integration of the cells with standard logic circuitry.>

Key concepts: EPROM, Computer science, CMOS, Computer hardware, Embedded system, Electrical engineering, Engineering

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