The behavior of the continuously charge-coupled random-access memory (C/SUP 3/RAM)

This paper describes a new random-access memory which achieves a bit density comparable to CCD memories. This memory uses as storage elements single-transistor memory cells which are connected to a common bit line. The bit line is implemented with an MOS transmission line, which makes possible an almost lossless charge transport from the single-transistor memory cell to the read/write amplifier. Due to the almost lossless charge transport, the storage capacitance can be reduced and the bit density increased. The expected performance of a 32-kbit memory has been derived.