1996•European Solid-State Device Research ConferenceRequires access
Two-Dimensional Analytical Modelling of Subthreshold Region in Fully-Depleted SOI MOSFETs
S. Pidin, Mitsumasa Koyanagi
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Abstract
New two-dimensional analytical models for the potential distribution and the subthreshold factor in SOI MOSFET are developed and extensive study of 0.1 ?m SOI MOSFET design is performed. It is shown that the ultra-thin SOI films and high doping concentrations are necessary to obtain high subthreshold slopes in SOI MOSFETs.