2009•Electronics LettersRequires access

Compact subthreshold slope modelling of short-channel double-gate MOSFETs

Udit Monga, Tor A. Fjeldly

Abstract

A precise, compact, subthreshold slope model of short-channel nanoscale double-gate MOSFETs is presented. The model encompasses the effects of device dimensions, built-in voltages and bias voltages on the subthreshold slope. The subthreshold model is based on conformal mapping techniques. Results are in excellent agreement with numerical simulations.

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Available abstract

Key concepts: Subthreshold conduction, Subthreshold slope, Conformal map, Threshold voltage, Channel (broadcasting), MOSFET, Nanoscopic scale, Voltage