2006•International Journal of ElectronicsRequires access

Investigation of thermal effects on the single-finger heterojunction bipolar transistors

K. F. Yarn, Y. H. Wang, Mau‐Phon Houng, B. K. Lew

Abstract

We will first derive a physics-based, analytical single-finger heterojunction bipolar transistor (HBT) model which takes into account the thermal effect. Next, the model is used to calculate the three figures of merit of HBT, i.e., current gain, cut-off frequency and maximum frequency. Their variation against the collector current density under the influence of thermal effect is presented and the calculation results are discussed.

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Available abstract

Key concepts: Heterojunction bipolar transistor, Bipolar junction transistor, Heterostructure-emitter bipolar transistor, Heterojunction, Materials science, Thermal, Optoelectronics, Transistor