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1994•Electronics LettersRequires access

High luminous flux semiconductor wafer-bondedAlGaInP/GaP large-area emitters

F. A. Kish, D.A. DeFevere, D. A. Vanderwater, G.R. Trott, R. Weiss, J. S. Major

Open publisher page 32 citations

Abstract

Data are presented demonstrating the high luminous flux operation of large-area light-emitting diodes (LEDs) fabricated by semiconductor wafer bonding. These LEDs operating in the 600–615 nm region are shown to be capable of emitting luminous fluxes (output powers) of 84 lumen (265 mW) and 195 lumen (475 mW) under DC and pulsed operation, respectively.

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What this paper is about

Data are presented demonstrating the high luminous flux operation of large-area light-emitting diodes (LEDs) fabricated by semiconductor wafer bonding. These LEDs operating in the 600–615 nm region are shown to be capable of emitting luminous fluxes (output powers) of 84 lumen (265 mW) and 195 lumen (475 mW) under DC and pulsed operation, respectively.

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Available abstract

Data are presented demonstrating the high luminous flux operation of large-area light-emitting diodes (LEDs) fabricated by semiconductor wafer bonding. These LEDs operating in the 600–615 nm region are shown to be capable of emitting luminous fluxes (output powers) of 84 lumen (265 mW) and 195 lumen (475 mW) under DC and pulsed operation, respectively.

Key concepts: Luminous flux, Wafer, Light-emitting diode, Optoelectronics, Materials science, Semiconductor, Diode, Wafer bonding

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