2005•Unpublished venueRequires access
A 2-D Threshold-Voltage Model for Small MOSFET with Quantum-Mechanical Effects
Y. P. Li J. P. Xu, Y.P. Li, P.T. Lai, W.B. Chen, S.G. Xu
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Abstract
A threshold condition different from the classical one is proposed for MOSFET with quantum effects. Furthermore, an accurate 1-D threshold-voltage model including polysilicon-depletion effects and a 2-D quantum-modified threshold-voltage model for small MOSFET are built. The simulated results exhibit good agreement with measurement data.