1990•Applied Physics LettersRequires access

Surface kinetics of chemical beam epitaxy of GaAs

Bing Liang, Charles W. Tu

Abstract

A new kinetic model for chemical beam epitaxy of GaAs using triethylgallium and arsine is proposed. Both group III and group V species are equally important in the surface reactions. This model can fit experimental data very well. Various aspects of the growth rate as a function of substrate temperature, triethylgallium and arsine flow rates are examined.

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Key concepts: Triethylgallium, Arsine, Chemical beam epitaxy, Epitaxy, Substrate (aquarium), Chemistry, Gallium arsenide, Kinetics