Micromachining applications of a high resolution ultrathick photoresist
Kangsik Lee, N. LaBianca, S. A. Rishton, S. Zolgharnain, Jeffrey D. Gelorme, Jane M. Shaw, T. H. P. Chang
Abstract
Kangsik Lee, N. LaBianca, S. A. Rishton, S. Zolgharnain, Jeffrey D. Gelorme, Jane M. Shaw, T. H. P. Chang
Abstract
This article describes a new negative-tone photoresist, SU-8, for ultrathick layer applications. An aspect ratio of 10:1 has been achieved using near-ultraviolet lithography in a 200-μm-thick layer. The use of this resist for building tall micromechanical structures by deep silicon reactive-ion etching and electroplating is demonstrated. Using SU-8 stencils, etched depths of ≳200 μm in Si and electroplated 130-μm-thick Au structures with near-vertical sidewalls have been achieved.
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This article describes a new negative-tone photoresist, SU-8, for ultrathick layer applications. An aspect ratio of 10:1 has been achieved using near-ultraviolet lithography in a 200-μm-thick layer. The use of this resist for building tall micromechanical structures by deep silicon reactive-ion etching and electroplating is demonstrated. Using SU-8 stencils, etched depths of ≳200 μm in Si and electroplated 130-μm-thick Au structures with near-vertical sidewalls have been achieved.
Key concepts: Photoresist, Electroplating, Surface micromachining, Resist, Materials science, Reactive-ion etching, Etching (microfabrication), Layer (electronics)