1995Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and PhenomenaRequires access

Micromachining applications of a high resolution ultrathick photoresist

Kangsik Lee, N. LaBianca, S. A. Rishton, S. Zolgharnain, Jeffrey D. Gelorme, Jane M. Shaw, T. H. P. Chang

Open publisher page 381 citations

Abstract

This article describes a new negative-tone photoresist, SU-8, for ultrathick layer applications. An aspect ratio of 10:1 has been achieved using near-ultraviolet lithography in a 200-μm-thick layer. The use of this resist for building tall micromechanical structures by deep silicon reactive-ion etching and electroplating is demonstrated. Using SU-8 stencils, etched depths of ≳200 μm in Si and electroplated 130-μm-thick Au structures with near-vertical sidewalls have been achieved.

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What this paper is about

This article describes a new negative-tone photoresist, SU-8, for ultrathick layer applications. An aspect ratio of 10:1 has been achieved using near-ultraviolet lithography in a 200-μm-thick layer. The use of this resist for building tall micromechanical structures by deep silicon reactive-ion etching and electroplating is demonstrated. Using SU-8 stencils, etched depths of ≳200 μm in Si and electroplated 130-μm-thick Au structures with near-vertical sidewalls have been achieved.

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Available abstract

This article describes a new negative-tone photoresist, SU-8, for ultrathick layer applications. An aspect ratio of 10:1 has been achieved using near-ultraviolet lithography in a 200-μm-thick layer. The use of this resist for building tall micromechanical structures by deep silicon reactive-ion etching and electroplating is demonstrated. Using SU-8 stencils, etched depths of ≳200 μm in Si and electroplated 130-μm-thick Au structures with near-vertical sidewalls have been achieved.

Key concepts: Photoresist, Electroplating, Surface micromachining, Resist, Materials science, Reactive-ion etching, Etching (microfabrication), Layer (electronics)

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