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2002•Microelectronics ReliabilityRequires access

Atomic-layer-deposited silicon-nitride/SiO2 stack––a highly potential gate dielectrics for advanced CMOS technology

Anri Nakajima, Quazi D. M. Khosru, Takashi Yoshimoto, Shin Yokoyama

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Key concepts: Materials science, Optoelectronics, Dielectric, Gate dielectric, Atomic layer deposition, Silicon nitride, Nitride, Silicon

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