1994•IEEE Microwave and Guided Wave LettersRequires access

Modeling MESFET's for inter-modulation analysis in RF switches

R.S. Virk, S.A. Maas

Abstract

This paper describes a new model for a resistive GaAs MESFET and its application to calculations of intermodulation distortion in switches. The model uses an expression for the I/V characteristics of the device whose parameters are fit to the static I/V and its derivatives. This new model provides a reliable means of describing the nonlinear distortion generated by a MESFET switch.>

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Key concepts: MESFET, Intermodulation, Nonlinear distortion, Electronic engineering, Distortion (music), Resistive touchscreen, Modulation (music), Nonlinear system