2010•Unpublished venueRequires access

Experimental parametric study of the parasitic inductance influence on MOSFET switching characteristics

Zheng Chen, Dushan Boroyevich, Rolando P. Burgos

Open publisher page 236 citations

Abstract

This paper presents an experimental parametric study of the parasitic inductance influence on MOSFET switching waveforms. The three most critical stray inductances, namely the gate-loop, switching-loop, and common-source inductances have all been studied and compared in terms of their effect on waveform ringing, switching loss, device stress, and electromagnetic interference. Based on the results obtained, a guideline has been established for the layout and design of high-speed switching circuits.

About this research paper

What this paper is about

This paper presents an experimental parametric study of the parasitic inductance influence on MOSFET switching waveforms. The three most critical stray inductances, namely the gate-loop, switching-loop, and common-source inductances have all been studied and compared in terms of their effect on waveform ringing, switching loss, device stress, and electromagnetic interference. Based on the results obtained, a guideline has been established for the layout and design of high-speed switching circuits.

Why it matters

OpenAlex reports 236 citations for this work. Citation counts describe recorded attention and do not establish research quality.

Key contribution

A contribution statement is not available in the OpenAlex record.

Method / approach

Method details are not available in the OpenAlex metadata.

Main findings

Findings are not separately available in the OpenAlex metadata.

Limitations

Limitations are not available in the OpenAlex metadata.

Applications

Application details are not available in the OpenAlex metadata.

Available abstract

This paper presents an experimental parametric study of the parasitic inductance influence on MOSFET switching waveforms. The three most critical stray inductances, namely the gate-loop, switching-loop, and common-source inductances have all been studied and compared in terms of their effect on waveform ringing, switching loss, device stress, and electromagnetic interference. Based on the results obtained, a guideline has been established for the layout and design of high-speed switching circuits.

Key concepts: Waveform, Ringing, Inductance, MOSFET, Parasitic element, Parametric statistics, Electronic engineering, Switching time

Related papers

Back to paper searchBrowse research topicsOriginal source
Experimental parametric study of the parasitic inductance influence on MOSFET switching characteristics — Research Paper | ScholarLens