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2007•Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and PhenomenaRequires access

Deep ultraviolet photolithography capability of ZEP520A electron beam resist for mix and match lithography

Devin K. Brown

Open publisher page 3 citations

Abstract

ZEP520A is a positive high resolution electron beam resist enabling nanometer scale features; however, electron beam lithography (EBL) is a characteristically slow process. It is demonstrated that ZEP520A can be exposed by deep ultraviolet (DUV) photolithography and is useful for mix and match lithography schemes. Submicron resolution was achieved, an optical pattern was successfully aligned to an EBL pattern, and 1cm2 was exposed in 11min with DUV compared to 27h with EBL.

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What this paper is about

ZEP520A is a positive high resolution electron beam resist enabling nanometer scale features; however, electron beam lithography (EBL) is a characteristically slow process. It is demonstrated that ZEP520A can be exposed by deep ultraviolet (DUV) photolithography and is useful for mix and match lithography schemes. Submicron resolution was achieved, an optical pattern was successfully aligned to an EBL pattern, and 1cm2 was exposed in 11min with DUV compared to 27h with EBL.

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Available abstract

ZEP520A is a positive high resolution electron beam resist enabling nanometer scale features; however, electron beam lithography (EBL) is a characteristically slow process. It is demonstrated that ZEP520A can be exposed by deep ultraviolet (DUV) photolithography and is useful for mix and match lithography schemes. Submicron resolution was achieved, an optical pattern was successfully aligned to an EBL pattern, and 1cm2 was exposed in 11min with DUV compared to 27h with EBL.

Key concepts: Resist, Photolithography, Electron-beam lithography, Lithography, Stencil lithography, Materials science, Next-generation lithography, Computational lithography

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