Experimental comparation of switching with IGBT and MOSFET

The modern power electronics are introducing unique challenges like high power dissipation, thermal stress and excessive electromagnetically emissions at the switching module. In order to achieve these demands, modern power electronics uses IGBT and MOSFET in most applications. These components have the ability to increase the power density and reduce system cost. A lot of literature is available about characteristics of IGBT and MOSFET, practical aspects of operating them in some topologies on the different power levels and frequencies. In this paper will be experimentally analyzed the switching behavior of the IGBT and MOS. During this contribution illustrative examples about the voltage and current waveforms will be presented, valid from specified power and control circuit topologies, both on the MOSFET and IGBT-switches. The measurements are presented for both command and power circuit. At the end of the paper are introduced some failure situations because of deviation from safe operation area of semiconductors.