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2014•Unpublished venueRequires access

A monolithic integrated 85 GHz schottky rectenna with dynamic tuning range of the conversion voltage

Wogong Zhang, Erich Kasper, Michael Oehme, Mathias Kaschel, Viktor Stefani, Jörg Schulze

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Abstract

In this paper, the latest research results for design and characterization of an 85 GHz fully monolithic integrated schottky rectenna (rectifying antenna) using SiMMWIC (Silicon Monolithic Mm-Wave Integrated Circuits) technology are presented. Under RF excitation in frequency range of 75 ~ 90 GHz a sharp receiving profile at 85 GHz of the designed rectenna is clearly characterized. With different bias currents (0.1 μA ~ 0.44 mA) the working point of the embedded schottky diode (cut-off frequency ~ 0.5 THz at 0 V) could be dynamically tuned for the optimal conversion voltage. The corresponding tuning range of the conversion voltage could be varied from 1 mV to 17 mV at 85 GHz.

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What this paper is about

In this paper, the latest research results for design and characterization of an 85 GHz fully monolithic integrated schottky rectenna (rectifying antenna) using SiMMWIC (Silicon Monolithic Mm-Wave Integrated Circuits) technology are presented. Under RF excitation in frequency range of 75 ~ 90 GHz a sharp receiving profile at 85 GHz of the designed rectenna is clearly characterized. With different bias currents (0.1 μA ~ 0.44 mA) the working point of the embedded schottky diode (cut-off frequency ~ 0.5 THz at 0 V) could be dynamically tuned for the optimal conversion voltage. The corresponding tuning range of the conversion voltage could be varied from 1 mV to 17 mV at 85 GHz.

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Available abstract

In this paper, the latest research results for design and characterization of an 85 GHz fully monolithic integrated schottky rectenna (rectifying antenna) using SiMMWIC (Silicon Monolithic Mm-Wave Integrated Circuits) technology are presented. Under RF excitation in frequency range of 75 ~ 90 GHz a sharp receiving profile at 85 GHz of the designed rectenna is clearly characterized. With different bias currents (0.1 μA ~ 0.44 mA) the working point of the embedded schottky diode (cut-off frequency ~ 0.5 THz at 0 V) could be dynamically tuned for the optimal conversion voltage. The corresponding tuning range of the conversion voltage could be varied from 1 mV to 17 mV at 85 GHz.

Key concepts: Rectenna, Schottky diode, Materials science, Optoelectronics, Terahertz radiation, Voltage, Antenna (radio), Radio frequency

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