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1997•Journal of Applied PhysicsRequires access

Numerical analysis of the transient response in amorphous silicon

Pavle Popović, E. Bassanese, F. Smole, J. Furlan, Stefan Grebner, R. Schwarz

Open publisher page 8 citations

Abstract

Using our program, TRansient Amorphous DEvice Simulator (TRADES), for the simulation of transient phenomena in amorphous silicon devices, the transient response after turning the light off is numerically calculated. Parameters for the numerical analysis are obtained by fitting the two families of the measured steady-state characteristics: light-intensity and temperature dependence of the secondary photocurrent. Using these parameters, both temperature and light-intensity dependence of the transients are calculated. It is shown that the transient is faster at higher temperatures and at higher illumination levels. Results are compared with measured transients at different temperatures.

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What this paper is about

Using our program, TRansient Amorphous DEvice Simulator (TRADES), for the simulation of transient phenomena in amorphous silicon devices, the transient response after turning the light off is numerically calculated. Parameters for the numerical analysis are obtained by fitting the two families of the measured steady-state characteristics: light-intensity and temperature dependence of the secondary photocurrent. Using these parameters, both temperature and light-intensity dependence of the transients are calculated. It is shown that the transient is faster at higher temperatures and at higher illumination levels. Results are compared with measured transients at different temperatures.

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OpenAlex reports 8 citations for this work. Citation counts describe recorded attention and do not establish research quality.

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Available abstract

Using our program, TRansient Amorphous DEvice Simulator (TRADES), for the simulation of transient phenomena in amorphous silicon devices, the transient response after turning the light off is numerically calculated. Parameters for the numerical analysis are obtained by fitting the two families of the measured steady-state characteristics: light-intensity and temperature dependence of the secondary photocurrent. Using these parameters, both temperature and light-intensity dependence of the transients are calculated. It is shown that the transient is faster at higher temperatures and at higher illumination levels. Results are compared with measured transients at different temperatures.

Key concepts: Transient (computer programming), Amorphous silicon, Materials science, Silicon, Amorphous solid, Photocurrent, Transient response, Intensity (physics)

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