Fabrication of Sub-50-nm Solid-State Nanostructures on the Basis of Dip-Pen Nanolithography

The fabrication of arrays of sub-50-nm gold dots and line structures with deliberately designed 12−100-nm gaps is reported. These structures were made by initially using dip-pen nanolithography to pattern the etch resist, 16-mercaptohexadecanoic acid, on Au/Ti/SiO x /Si substrates and then using wet-chemical etching to remove the exposed gold.