2011•Unpublished venueRequires access

Time dependent dielectric breakdown (TDDB) characteristics of metal-oxide-semiconductor capacitors with HfLaO and HfZrLaO ultra-thin gate dielectrics

C. H. Liu, Y.-L. Chen, Chaowei Cheng, H. W. Chen, H. W. Hsu, S. Y. Chen, Heng‐Sheng Huang, Mu‐Chun Wang

Abstract

Metal-oxide-semiconductor (MOS) capacitors with atomic-layer-deposition (ALD) HfLaO or HfZrLaO high-κ gate dielectrics have been fabricated, and the reliability of time-dependent-dielectric-breakdown (TDDB) characteristics have also been analyzed. HfZrLaO shows a better performance in comparison with HfLaO. Moreover, some important parameters for HfZrLaO and HfLaO gate dielectrics are compared in this study.

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Key concepts: Time-dependent gate oxide breakdown, Capacitor, Materials science, Dielectric, Dielectric strength, Gate dielectric, Optoelectronics, Gate oxide