ScholarLens Back to search
1977•Applied Physics LettersRequires access

Evaluation of the threshold voltage for short-channel MOSFET’s

Masanori Nishida

Open publisher page 1 citations

Abstract

It has been well known that in a long-channel MOSFET, the experimental value of the threshold voltage obtained by the square-root extrapolation method in the saturation region agrees well with the theoretical criterion. In a short-channel MOSFET, the so-determined threshold voltage depends on the drain voltage because of the drain current dependence on the drain voltage VDS. In this letter, a new method to determine the threshold voltage for VDS=0 V will be discussed.

About this research paper

What this paper is about

It has been well known that in a long-channel MOSFET, the experimental value of the threshold voltage obtained by the square-root extrapolation method in the saturation region agrees well with the theoretical criterion. In a short-channel MOSFET, the so-determined threshold voltage depends on the drain voltage because of the drain current dependence on the drain voltage VDS. In this letter, a new method to determine the threshold voltage for VDS=0 V will be discussed.

Why it matters

OpenAlex reports 1 citations for this work. Citation counts describe recorded attention and do not establish research quality.

Key contribution

A contribution statement is not available in the OpenAlex record.

Method / approach

Method details are not available in the OpenAlex metadata.

Main findings

Findings are not separately available in the OpenAlex metadata.

Limitations

Limitations are not available in the OpenAlex metadata.

Applications

Application details are not available in the OpenAlex metadata.

Available abstract

It has been well known that in a long-channel MOSFET, the experimental value of the threshold voltage obtained by the square-root extrapolation method in the saturation region agrees well with the theoretical criterion. In a short-channel MOSFET, the so-determined threshold voltage depends on the drain voltage because of the drain current dependence on the drain voltage VDS. In this letter, a new method to determine the threshold voltage for VDS=0 V will be discussed.

Key concepts: Threshold voltage, MOSFET, Extrapolation, Reverse short-channel effect, Drain-induced barrier lowering, Overdrive voltage, Channel length modulation, Voltage

Related papers

Related paper 1Related paper 2Related paper 3
Back to paper searchBrowse research topicsOriginal source
Evaluation of the threshold voltage for short-channel MOSFET’s — Research Paper | ScholarLens