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1999•Journal of Applied PhysicsRequires access

Magnetization reversal and magnetoresistance in a lateral spin-injection device

W. Y. Lee, S. Gardelis, B. C. Choi, Yongbing Xu, C. G. Smith, C. H. W. Barnes, D. A. Ritchie, E. H. Linfield, J. A. C. Bland

Open publisher page 75 citations

Abstract

We have investigated the magnetization reversal and magnetoresistance (MR) behavior of a lateral spin-injection device. The device consists of a two-dimensional electron gas (2DEG) system in an InAs quantum well and two ferromagnetic (Ni80Fe20) contacts: an injector (source) and a detector (drain). Spin-polarized electrons are injected from the first contact and propagating through InAs are collected by the second contact. By engineering the shape of the permalloy film distinct switching fields (Hc) from the injector and the collector have been observed by scanning Kerr microscopy and MR measurements. Magneto-optic Kerr effect (MOKE) hysteresis loops demonstrate that there is a range of magnetic field (20–60 Oe), at room temperature, over which magnetization in one contact is aligned antiparallel to that in the other. The MOKE results are consistent with the variation of the magnetoresistance in the spin-injection device.

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What this paper is about

We have investigated the magnetization reversal and magnetoresistance (MR) behavior of a lateral spin-injection device. The device consists of a two-dimensional electron gas (2DEG) system in an InAs quantum well and two ferromagnetic (Ni80Fe20) contacts: an injector (source) and a detector (drain). Spin-polarized electrons are injected from the first contact and propagating through InAs are collected by the second contact. By engineering the shape of the permalloy film distinct switching fields (Hc) from the injector and the collector have been observed by scanning Kerr microscopy and MR measurements. Magneto-optic Kerr effect (MOKE) hysteresis loops demonstrate that there is a range of magnetic field (20–60 Oe), at room temperature, over which magnetization in one contact is aligned antiparallel to that in the other. The MOKE results are consistent with the variation of the magnetoresistance in the spin-injection device.

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Available abstract

We have investigated the magnetization reversal and magnetoresistance (MR) behavior of a lateral spin-injection device. The device consists of a two-dimensional electron gas (2DEG) system in an InAs quantum well and two ferromagnetic (Ni80Fe20) contacts: an injector (source) and a detector (drain). Spin-polarized electrons are injected from the first contact and propagating through InAs are collected by the second contact. By engineering the shape of the permalloy film distinct switching fields (Hc) from the injector and the collector have been observed by scanning Kerr microscopy and MR measurements. Magneto-optic Kerr effect (MOKE) hysteresis loops demonstrate that there is a range of magnetic field (20–60 Oe), at room temperature, over which magnetization in one contact is aligned antiparallel to that in the other. The MOKE results are consistent with the variation of the magnetoresistance in the spin-injection device.

Key concepts: Permalloy, Condensed matter physics, Magnetoresistance, Magnetization, Kerr effect, Ferromagnetism, Materials science, Magneto-optic Kerr effect

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