2003Journal of Applied PhysicsRequires access

Study of domain wall magnetoresistance by submicron patterned magnetic structure

Chunhua Yu, Shang‐Fan Lee, Jai-Lin Tsai, E‐Wen Huang, T. Y. Chen, Y. D. Yao, Y. Liou, Ching‐Ray Chang

Open publisher page 14 citations

Abstract

Through the proper design of submicron permalloy (Ni80Fe20) wires, domain wall magnetoresistance is investigated. A positive contribution to magnetoresistance (MR) was found for domain walls in these wires after extracting the anisotropic MR effect. Some theoretical models are used to discuss our results.

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What this paper is about

Through the proper design of submicron permalloy (Ni80Fe20) wires, domain wall magnetoresistance is investigated. A positive contribution to magnetoresistance (MR) was found for domain walls in these wires after extracting the anisotropic MR effect. Some theoretical models are used to discuss our results.

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OpenAlex reports 14 citations for this work. Citation counts describe recorded attention and do not establish research quality.

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Available abstract

Through the proper design of submicron permalloy (Ni80Fe20) wires, domain wall magnetoresistance is investigated. A positive contribution to magnetoresistance (MR) was found for domain walls in these wires after extracting the anisotropic MR effect. Some theoretical models are used to discuss our results.

Key concepts: Permalloy, Magnetoresistance, Materials science, Condensed matter physics, Domain wall (magnetism), Magnetic domain, Micromagnetics, Giant magnetoresistance

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