ScholarLens Back to search
1994•Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and PhenomenaRequires access

Step bunching and step equalization on vicinal GaAs(001) surfaces

K. Pond, A. Lorke, J. P. Ibbetson, V. Bressler-Hill, Roya Maboudian, W. H. Weinberg, A. C. Gossard, P. M. Petroff

Open publisher page 27 citations

Abstract

Terrace width distributions have been calculated from scanning tunneling microscopy (STM) images of molecular-beam epitaxy (MBE)-grown GaAs(001) surfaces misoriented by both 1° and 2° towards the (111)A direction. This analysis reveals a peak in the terrace width distribution at approximately 40–50 Å, regardless of the original miscut, with larger terraces forming in order to preserve the angle of vicinality. Growth of a tilted superlattice (TSL) improves the periodicity of the surface. A statistical analysis of the STM image of a 1° TSL capped with three monolayers of GaAs reveals a bell-shaped distribution of terrace widths with a peak at the average terrace width. These results suggest that MBE growth of vicinal GaAs(001) does not result in equalized steps but that the growth of a TSL does tend towards step equalization. The differences between these two growth regimes are discussed.

About this research paper

What this paper is about

Terrace width distributions have been calculated from scanning tunneling microscopy (STM) images of molecular-beam epitaxy (MBE)-grown GaAs(001) surfaces misoriented by both 1° and 2° towards the (111)A direction. This analysis reveals a peak in the terrace width distribution at approximately 40–50 Å, regardless of the original miscut, with larger terraces forming in order to preserve the angle of vicinality. Growth of a tilted superlattice (TSL) improves the periodicity of the surface. A statistical analysis of the STM image of a 1° TSL capped with three monolayers of GaAs reveals a bell-shaped distribution of terrace widths with a peak at the average terrace width. These results suggest that MBE growth of vicinal GaAs(001) does not result in equalized steps but that the growth of a TSL does tend towards step equalization. The differences between these two growth regimes are discussed.

Why it matters

OpenAlex reports 27 citations for this work. Citation counts describe recorded attention and do not establish research quality.

Key contribution

A contribution statement is not available in the OpenAlex record.

Method / approach

Method details are not available in the OpenAlex metadata.

Main findings

Findings are not separately available in the OpenAlex metadata.

Limitations

Limitations are not available in the OpenAlex metadata.

Applications

Application details are not available in the OpenAlex metadata.

Available abstract

Terrace width distributions have been calculated from scanning tunneling microscopy (STM) images of molecular-beam epitaxy (MBE)-grown GaAs(001) surfaces misoriented by both 1° and 2° towards the (111)A direction. This analysis reveals a peak in the terrace width distribution at approximately 40–50 Å, regardless of the original miscut, with larger terraces forming in order to preserve the angle of vicinality. Growth of a tilted superlattice (TSL) improves the periodicity of the surface. A statistical analysis of the STM image of a 1° TSL capped with three monolayers of GaAs reveals a bell-shaped distribution of terrace widths with a peak at the average terrace width. These results suggest that MBE growth of vicinal GaAs(001) does not result in equalized steps but that the growth of a TSL does tend towards step equalization. The differences between these two growth regimes are discussed.

Key concepts: Vicinal, Terrace (agriculture), Molecular beam epitaxy, Superlattice, Scanning tunneling microscope, Monolayer, Materials science, Condensed matter physics

Related papers

Related paper 1Related paper 2Related paper 3
Back to paper searchBrowse research topicsOriginal source
Step bunching and step equalization on vicinal GaAs(001) surfaces — Research Paper | ScholarLens